GT15J301 データシートの表示（PDF） - Toshiba
部品番号
コンポーネント説明
メーカー
GT15J301 Datasheet PDF : 7 Pages
| |||
GT15J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15J301
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
z Third-generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.) (IC = 15A)
z Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A)
z FRD included between emitter and collector
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Emitter−Collector Forward
DC
Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
600
V
±20
V
15
A
30
A
15
A
30
A
35
W
150
°C
−55~150
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10R1C
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
15J301
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31
Share Link: 