DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GT15J301 データシートの表示(PDF) - Toshiba

部品番号
コンポーネント説明
メーカー
GT15J301 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
GT15J301
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
Gate Leakage Current
Collector CutOff Current
GateEmitter Cut-Off Voltage
CollectorEmitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
TurnOn Time
Fall Time
TurnOff Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
IGES
VGE = ±20V, VCE = 0
±500 nA
ICES
VCE = 600V, VGE = 0
1.0 mA
VGE (OFF) IC = 1.5mA, VCE = 5V
5.0
8.0
V
VCE (sat) IC = 15A, VGE = 15V
2.1 2.7
V
Cies
VCE = 20V, VGE = 0, f = 1MHz
950
pF
tr
Inductive Load
0.12
ton
VCC = 300V, IC = 15A
tf
VGG = ±15V, RG = 75Ω
0.40
μs
0.15 0.30
(Note 1)
toff
0.50
VF
IF = 15A, VGE = 0
2.0
V
trr
IF = 15A, di / dt = 100A / μs
200
ns
Rth (jc)
3.57 °C / W
Rth (jc)
4.63 °C / W
Note 1: Switching time measurement circuit and input / output waveforms
Switching loss measurement waveforms
2
2006-10-31

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]