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GT15J331 データシートの表示(PDF) - Toshiba
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コンポーネント説明
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GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
GT15J331 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
50
Common emitter
Tc
=
25°C
40
I
C
– V
CE
30
20
15
10
20
9
10
VGE
=
8 V
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
GT15J331
V
CE
– V
GE
20
Common emitter
Tc
= −
40°C
16
12
30
15
8
4
IC
=
6 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
20
Common emitter
Tc
=
25°C
16
V
CE
– V
GE
12
30
15
8
4
IC
=
6 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
20
Common emitter
Tc
=
125°C
16
V
CE
– V
GE
12
30
15
8
4
IC
=
6 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
30
Common emitter
VCE
=
5 V
I
C
– V
GE
20
10
−
40
Tc
=
125°C
25
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
V
CE (sat)
– Tc
4
Common emitter
VGE
=
15 V
3
30 A
2
15 A
1
IC
=
6 A
0
−
60
−
20
20
60
100
140
Case temperature Tc (°C)
3
2006-10-31
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