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GT15J331 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
GT15J331 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
3000
1000
C – V
CE
Cies
300
100
30
Coes
Common emitter
Cres
10
VGE
=
0
f
=
1 MHz
Tc
=
25°C
3
1
3
10 30 100 300 1000 3000
Collector-emitter voltage V
CE
(V)
GT15J331
V
CE
, V
GE
– Q
G
500
20
Common emitter
RL
=
20
Ω
400
Tc
=
25°C
16
300
12
300
200
200
VCE
=
100 V
8
100
4
0
0
0
10
20
30
40
50
60
70
Gate charge Q
G
(nC)
30
Common collector
VGE
=
0
25
I
F
−
V
F
20
15
Tc
=
125°C
10
25
−
40
5
0
0
0.4
0.8
1.2
1.6
2.0
Forward voltage V
F
(V)
t
rr
, I
rr
−
IF
100
Common collector
di/dt
= −
100 A/
μ
S
VGE
=
0
: Tc
=
25°C
: Tc
=
125°C
10
trr
Irr
1000
100
1
10
0
3
6
9
12
15
Forward current I
F
(A)
Safe operating area
50
IC max (pulse)
*
30
10 ms
*
50
μ
s
*
10 IC max
(continuous)
5
3
DC
operation
1
*
: Single
0.5
nonrepetitive pulse
0.3
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
3
10
30
100
μ
s
*
1 ms
*
100
300
1000
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
50
30
10
5
3
1
0.5
Tj
<=
125°C
0.3
VGE
=
15 V
RG
=
43
Ω
0.1
1
3
10
30
100
300
1000
Collector-emitter voltage V
CE
(V)
5
2006-10-31
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