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HD66100D データシートの表示(PDF) - Hitachi -> Renesas Electronics

部品番号
コンポーネント説明
メーカー
HD66100D
Hitachi
Hitachi -> Renesas Electronics Hitachi
HD66100D Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
HD66100F
Electrical Characteristics
DC Characteristics (VCC = 5V ± 10%, VCC – VEE = 3.0 to 6.0V, GND = 0V, Ta = –20 to +75°C)
Item
Symbol Terminals Min
Typ Max
Unit Test Condition Note
Input high voltage VIH
Input low voltage VIL
Output high voltage VOH
Output low voltage VOL
On resistance Vi–Vj RON1
CL1, CL2, 0.8 × VCC
M, DI, SHL 0
DO
VCC – 0.4 —
Y1–Y80 —
V1–V4
VCC
V
0.2 × VCC V
V
0.4
V
11
k
IOH = –0.4 mA
IOL = +0.4 mA
ION = 0.1 mA to
one Y terminal
RON2
— 30
kION = 0.05 mA to
each Y terminal
Input leakage
IIL
CL1, CL2, –5.0
— 5.0
µA Vin = 0V to VCC
current
M, DI, SHL
Vi leakage current IVL
V1–V4
–5.0
— 5.0
µA Output Y1–Y80
open
Vin = VCC to VEE
Current dissipation IGND
IEE
— 2.0
mA fCL2 = 1.0 MHz
1
— 0.1
mA fCL1 = 2.5 kHz
Note: 1. Input/output currents are excluded; when an input is at the intermediate level in CMOS,
excessive current flows from the power supply through the input circuit.
To avoid this, VIH and VIL must be fixed at VCC and GND level respectively.
120

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