DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HN58X2402SFPIAGE データシートの表示(PDF) - Renesas Electronics

部品番号
コンポーネント説明
メーカー
HN58X2402SFPIAGE
Renesas
Renesas Electronics Renesas
HN58X2402SFPIAGE Datasheet PDF : 18 Pages
First Prev 11 12 13 14 15 16 17 18
HN58X2402SFPIAG/HN58X2404SFPIAG
Read Operation
There are three read operations: current address read, random read, and sequential read. Read operations are initiated
the same way as write operations with the exception of R/W = “1”.
Current Address Read:
The internal address counter maintains the last address accessed during the last read or write operation, with
incremented by one. Current address read accesses the address kept by the internal address counter. After receiving a
start condition and the device address word(R/W is “1”), the EEPROM outputs the 8-bit current address data from the
most significant bit following acknowledgment “0”. If the EEPROM receives acknowledgment “1” (no
acknowledgment) and a following stop condition, the EEPROM stops the read operation and is turned to a standby
state. In case the EEPROM has accessed the last address of the last page at previous read operation, the current
address will roll over and returns to zero address. In case the EEPROM has accessed the last address of the page at
previous write operation, the current address will roll over within page addressing and returns to the first address in the
same page. The current address is valid while power is on. The current address after power on will be indefinite. The
random read operation described below is necessary to define the memory address.
Current Address Read Operation
2k, 4k
Device
address
1010
Read data (n+1)
R
Start
ACK No ACK
R/W
Note: 1. Don‘t care bit for 4k.
Stop
Rev.4.00, Jul.13.2005, page 13 of 16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]