ICP-S データシートの表示（PDF） - ROHM Semiconductor

部品番号

コンポーネント説明

メーカー

ICP-S

Overcurrent Protection Elements

ROHM Semiconductor 

Overcurrent Protection Elements

ICP-S Technical Manual

10. Precautions

1. Set the breaking current two to ten times as high as the rated current.

Use the ICP-S so that the open-circuit voltage between the terminals after the ICP-S breaks

the current will be a maximum of 50 V. Unless the ICP-S is used under these conditions, the

mold may be damaged or internal resistance may remain after the ICP-S breaks the current.

2. Do not use the ICP-S for the primary side of commercial power supply, or otherwise the mold

may be damaged by arcing after the ICP-S breaks the current.

10000

Ta=25°C

1000

10000

Ta=25°C

1000

100

100

10

A :Effective pulse breaking

line (with no margin)

1 B: Effective pulse critical line

(with no margin)

0.1

C: Effective pulse recommended

critical line (with margin)

10 A :Effective pulse breaking

line (with no margin)

B: Effective pulse critical line

(with no margin)

1

0.1

C: Effective pulse recommended

critical line (with margin)

0.01

0.001

0.01 0.1

1

10 100 1000 10000 100000

Time (msec)

I2 t-t Characteristic Curve (ICP-S0.5)

0.01

0.001

0.01 0.1

1

10 100 1000 10000 100000

Time (msec)

I2 t-t Characteristic Curve (ICP-S0.7)

10000

Ta=25°C

1000

10000

Ta=25°C

1000

100

A :Effective pulse breaking

line (with no margin)

10

B: Effective pulse critical line

(with no margin)

1

C: Effective pulse recommended

critical line (with margin)

0.1

100

A :Effective pulse breaking

line (with no margin)

10

B: Effective pulse critical line

(with no margin)

1

C: Effective pulse recommended

critical line (with margin)

0.1

0.01

0.001

0.01 0.1

1

10 100 1000 10000 100000

Time (msec)

I2 t-t Characteristic Curve (ICP-S1.0)

0.01

0.001

0.01 0.1

1

10 100 1000 10000 100000

Time (msec)

I2 t-t Characteristic Curve (ICP-S1.2)

Rev.A 13/13

Share Link: