UMX2N(2015) データシートの表示（PDF） - ROHM Semiconductor

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UMX2N
(Rev.:2015)

General purpose transistor (dual transistors)

ROHM Semiconductor 

EMX2 / UMX2N / IMX2

Datasheet

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

Emitter-base voltage

r Collector current

fo Power dissipation

Junction temperature

d Range of storage temperature

EMX2/ UMX2N

IMX2

VCEO

VEBO

IC

PD*1 *2

PD*1 *3

Tj

Tstg

50

7

150

150

300

150

-55 to +150

V

V

mA

mW/Total

mW/Total

℃

℃

de lElectrical characteristics (Ta = 25°C)

<For Tr1 and Tr2 in common>

en ns Parameter

Symbol

Conditions

m ig Collector-base breakdown voltage BVCBO IC = 50μA

Collector-emitter breakdown

s voltage

BVCEO IC = 1mA

m e Emitter-base breakdown voltage

o Collector cut-off current

D Emitter cut-off current

c Collector-emitter saturation voltage

e w DC current gain

BVEBO

ICBO

IEBO

VCE(sat)

hFE

IE = 50μA

VCB = 60V

VEB = 7V

IC = 50mA, IB = 5mA

VCE = 6V, IC = 1mA

R e Transition frequency

fT

VCE = 12V, IE = -2mA,

f = 100MHz

ot N Output capacitance

Cob

VCB = 12V, IE = 0A,

f = 1MHz

N*1 Each terminal mounted on a reference land.

Values

Unit

Min. Typ. Max.

60

-

-

V

50

-

-

V

7

-

-

V

-

- 100 nA

-

- 100 nA

-

- 400 mV

120 - 560 -

- 180 - MHz

- 2.0 3.5 pF

*2 120mW per element must not be exceeded.

*3 200mW per element must not be exceeded.

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　 　 　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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