IRF7210
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-14 ––– ––– V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage
-12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.011 –––
––– .005 .007
.007 .010
V/°C
Ω
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -16A
VGS = -2.5V, ID = -12A
VGS(th)
Gate Threshold Voltage
-0.6 ––– ––– V VDS = VGS, ID = -500µA
gfs
Forward Transconductance
16 ––– ––– S VDS = -10V, ID = -16A
IDSS
Drain-to-Source Leakage Current
––– ––– -10
VDS = -12V, VGS = 0V
––– ––– -1.0 µA VDS = -9.6V, VGS = 0V
––– ––– -100
VDS = -12V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
––– ––– -100 nA VGS = -12V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 212 –––
ID = -10A
Qgs
Gate-to-Source Charge
––– 27 ––– nC VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
––– 52 –––
VGS = -5.0V
td(on)
Turn-On Delay Time
––– 50 ––– ns VDD = -10V
tr
Rise Time
––– 3.0 –––
ID = -10A
td(off)
Turn-Off Delay Time
––– 6.5 ––– µs RD = 1.0Ω
tf
Fall Time
––– 30 –––
RG = 6.2Ω
Ciss
Input Capacitance
––– 17179 –––
VGS = 0V
Coss
Output Capacitance
––– 9455 ––– pF VDS = -10V
Crss
Reverse Transfer Capacitance
––– 8986 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
Typ.
–––
165
296
Max. Units
-2.5
A
-100
-1.2 V
247 ns
444 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = 85A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
2
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