HM62W16255HTT-12 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

メーカー

HM62W16255HTT-12

4M high speed SRAM (256-kword x 16-bit), 12ns access time

Hitachi -> Renesas Electronics 

HM62W16255H Series

Low VCC Data Retention Characteristics (Ta = 0 to +70°C)

This characteristics is guaranteed only for L-version.

Parameter

VCC for data retention

Data retention current

Symbol Min Typ*1 Max Unit

VDR

2.0 — — V

I CCDR

— 40 600 µA

Chip deselect to data retention time tCDR

0

— — ns

Operation recovery time

tR

5

— — ms

Note: 1. Typical values are at VCC = 3.0 V, Ta = +25˚C, and not guaranteed.

Test conditions

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

VCC = 3 V

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

See retention waveform

Low VCC Data Retention Timing Waveform

tCDR

Data retention mode

tR

VCC

3.0 V

VDR

2.2 V

CS

VCC ≥ CS ≥ VCC – 0.2 V

0V

14

Share Link: