IRHNA7264SE データシートの表示（PDF） - International Rectifier
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IRHNA7264SE Datasheet PDF : 4 Pages
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IRHNA7264SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
250 — — V
—
— — V/oC
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— — 0.110
— — 0.123 Ω
VGS = 12V, ID =24A
VGS = 12V, ID = 34A
2.5 — 4.5 V
4 — — S( )
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 21A
—
—
— 50
— 250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
— 100 nA
— — -100
VGS = 20V
VGS = -20V
— — 185
— — 55 nC
VGS =12V, ID = 34A
VDS = Max. Rating x 0.5
— — 180
— — 35
—
—
— 200
— 140
ns
VDD = 125V, ID =34A,
RG = 2.35Ω
— — 75
— 2.0 —
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
—
6.5 —
nH
center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
— 7800 —
— 1250 — pF
— 550 —
VGS = 0V, VDS = 25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
Min. Typ. Max. Units
Test Conditions
——
34
A Modified MOSFET symbol showing the
— — 136
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB Junction-to-PC board
— — 1.4 V
— — 875 ns
— — 12 µC
Tj = 25°C, IS = 34A, VGS = 0V
Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
VDD ≤ 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.42
K/W
— TBD —
Test Conditions
soldered to a copper-clad PC board
To Order
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