JANSR2N7268 データシートの表示（PDF） - International Rectifier
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JANSR2N7268 Datasheet PDF : 12 Pages
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IRHM7150, JANSR2N7268
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1 300 - 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 —
100
—V
VGS(th) Gate Threshold Voltage Ã
2.0 4.0 1.25 4.5
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source Ã
—
25
—
— 0.065 —
50 µA
0.09 Ω
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source Ã
— 0.065
— 0.09 Ω
On-State Resistance (TO-254AA)
VSD
Diode Forward Voltage Ã
— 1.4
—
1.4 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =21A
VGS = 12V, ID =21A
VGS = 0V, IS = 34A
1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
(MeV/(mg/cm2)) (MeV)
Cu
28
285
Br
36.8
305
Range
(µm)
43
39
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
100
100
100
80
60
100
90
70
50
—
120
100
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
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