IS61LV12816-12B(2003) データシートの表示（PDF） - Integrated Silicon Solution

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IS61LV12816-12B
(Rev.:2003)

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61LV12816

PIN DESCRIPTIONS

A0-A16

I/O0-I/O15

CE

OE

WE

LB

UB

NC

VDD

GND

Address Inputs

Data Inputs/Outputs

Chip Enable Input

Output Enable Input

Write Enable Input

Lower-byte Control (I/O0-I/O7)

Upper-byte Control (I/O8-I/O15)

No Connection

Power

Ground

ISSI ®

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to + 70°C

Industrial

–40°C to + 85°C

VDD

3.3V ± 10%

3.3V ± 10%

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VDD

Power Supply Voltage Relative to GND

–0.3 to 4.0

V

VTERM

Terminal Voltage with Respect to GND

–0.5 to VDD + 0.5

V

TSTG

Storage Temperature

–65 to + 150

°C

PT

Power Dissipation

1.0

W

IOUT

DC Output Current

±20

mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliabil-

ity.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

VIH

Input HIGH Voltage(1)

VIL

Input LOW Voltage(1)

ILI

Input Leakage

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns).

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns).

Min.

Max.

Unit

2.4

—

V

—

0.4

V

2

VDD + 0.3

V

–0.3

0.8

V

–1

1

µA

–1

1

µA

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. C

02/05/2003

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