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NX25F080A-3T-R データシートの表示(PDF) - NexFlash -> Winbond Electronics

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NX25F080A-3T-R
NexFlash
NexFlash -> Winbond Electronics NexFlash
NX25F080A-3T-R Datasheet PDF : 25 Pages
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NX25F080A
SERIAL SRAM AND PROGRAM BUFFER
COMMANDS
Write to SRAM Command
The Write to SRAM command (82H) provides access to
the 536-Byte SRAM independently of any Flash memory
array operation. The command is similar to the Write to
Sector command sequence except that the sector
address field S[15:0] is replaced by all 0 bits. When CS is
asserted high to complete the command, the contents of
Write to
SRAM
Command
16 Clocks
Byte
Address*
SI
82H
0000H
B[15:0]
SO
*The byte address only uses bits [9:0]
1
the SRAM will be maintained until overwritten via another
command or the power is removed. Using the Write to
2 SRAM command, data can be loaded in preparation of
writing to a sector in memory and then transferred to a
selected sector using the Transfer SRAM to Sector
command.
3
Write Sector Data
8 Clocks
First Byte - Last Byte
00H
4
5
6
Read from SRAM
The Read from SRAM command (81H) provides access to
the 536-Byte SRAM independent of any Flash memory
array operations. The command is similar to the Read
Read from
SRAM
Command
16 Clocks
Byte
Address*
16 Clocks
SI
81H
0000H
B[15:0]
0000H
SO
*The byte address only uses bits [9:0]
7 from Sector command except for the sector address field
S[15:0] which is replaced with all 0 bits.
8
9
RB[15:0]
First Byte - Last Byte
Read/Busy
Read SRAM Data
Status
10
11
12
NexFlash Technologies, Inc.
15
PRELIMINARY NXSF005C-0699
06/11/99 ©

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