DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

K522H1HACF-B050 データシートの表示(PDF) - Samsung

部品番号
コンポーネント説明
メーカー
K522H1HACF-B050 Datasheet PDF : 94 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
K522H1HACF-B050
datasheet
1.10 AC Characteristics for Operation
Parameter
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
WP Low to WE Low (disable mode)
WP High to WE Low (enable mode)
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE High to Output Hold
CE High to Output Hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Symbol
Min
tAR
10
tCLR
10
tRR
20
tRP
21
tWB
-
tWW
100
tRC
42
tREA
-
tCEA
-
tRHZ
-
tCHZ
-
tCSD
0
tROH
15
tCOH
15
tREH
10
tIR
0
tRHW
100
tWHR
60
tRST
-
NOTE :
1) If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5μs.
Rev. 1.0
MCP Memory
Max
Unit
-
ns
-
ns
-
ns
-
ns
100
ns
-
ns
-
ns
30
ns
35
ns
100
ns
30
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
5/10/500(1)
μs
- 17 -

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]