K6R1016V1C データシートの表示（PDF） - Samsung

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K6R1016V1C

64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Samsung 

K6R1016V1C-C/C-L, K6R1016V1C-I/C-P

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev. No.

History

for AT&T

CMOS SRAM

Draft Data

Remark

Rev. 0.0

Rev. 1.0

Initial release with Preliminary.

Release to Final Data Sheet.

1.1. Delete Preliminary.

1.2. Changed DC characteristics.

Item

ICC

12ns

15ns

20ns

Previous

85mA

83mA

80mA

Changed

95mA

93mA

90mA

Aug. 5. 1998

Sep. 7. 1998

Preliminary

Final

Rev. 2.0

Rev. 2.1

Added 48-fine pitch BGA.

Changed device part name for FP-BGA.

Item

Previous

Symbol

Z

ex) K6R1016V1C-Z -> K6R1016V1C-F

Changed

F

Sep. 17. 1998

Nov. 5. 1998

Final

Final

Rev. 2.2

Changed device ball name for FP-BGA.

Previous

I/O1 ~ I/O8

I/O9 ~ I/O16

Changed

I/O9 ~ I/O16

I/O1 ~ I/O8

Dec. 10. 1998

Final

Rev. 3.0

1. Added 10ns speed for FP-BGA only.

2. Changed Standby Current.

Item

Previous

Standby Current(Isb1)

0.3mA

3. Added Data Retention Characteristics.

Changed

0.5mA

Mar. 2. 1999

Final

Rev. 3.1

Rev. 3.2

Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)

Supply Voltage Change

1. Only 10ns Bin : 3.15V ~ 3.6V

2. The Rest Bin : 3.0V ~ 3.6V

Apr. 24. 2000

Aug. 25. 2000

Final

Final

Rev. 3.3

VIH/VIL Change

Item

VIH

VIL

Previous

Min

Max

2.0

VCC+0.5

-0.5

0.8

Changed

Min

Max

2.0

VCC+0.3

-0.3

0.8

Oct. 2. 2000

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Revision 3.3

October 2000

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