K6R1016V1C データシートの表示（PDF） - Samsung

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K6R1016V1C

64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Samsung 

K6R1016V1C-C/C-L, K6R1016V1C-I/C-P

DATA RETENTION CHARACTERISTICS*(TA=0 to 70°C)

Parameter

VCC for Data Retention

Data Retention Current

Symbol

VDR

IDR

Test Condition

CS≥VCC-0.2V

VCC=3.0V, CS≥VCC-0.2V

VIN≥VCC-0.2V or VIN≤0.2V

VCC=2.0V, CS≥VCC-0.2V

VIN≥VCC-0.2V or VIN≤0.2V

Data Retention Set-Up Time

Recovery Time

tSDR

tRDR

See Data Retention

Wave form(below)

* The above parameters are also guaranteed at industrial temperature range.

Data Retention Characteristic is for L-ver only.

for AT&T

CMOS SRAM

Min.

Typ.

Max.

Unit

2.0

-

3.6

V

-

-

0.4

mA

-

-

0.3

0

-

-

ns

5

-

-

ms

DATA RETENTION WAVE FORM

CS controlled

VCC

3.0V

tSDR

Data Retention Mode

tRDR

VIH

VDR

CS

GND

CS≥VCC - 0.2V

-9-

Revision 3.3

October 2000

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