K6R1004C1C-C10 データシートの表示（PDF） - Samsung
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K6R1004C1C-C10 Datasheet PDF : 9 Pages
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K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
PRELIMINARY
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
255Ω
+5.0V
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Symbol
K6R1004C1C-10
Min
Max
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
tRC
10
-
tAA
-
10
tCO
-
10
tOE
-
5
tLZ
3
-
tOLZ
0
-
tHZ
0
5
tOHZ
0
5
Output Hold from Address Change
tOH
3
-
Chip Selection to Power Up Time
tPU
0
-
Chip Selection to Power DownTime
tPD
-
10
* The above parameters are also guaranteed at industrial temperature range.
K6R1004C1C-12
Min
Max
12
-
-
12
-
12
-
6
3
-
0
-
0
6
0
6
3
-
0
-
-
12
K6R1004C1C-15
Unit
Min
Max
15
-
ns
-
15
ns
-
15
ns
-
7
ns
3
-
ns
0
-
ns
0
7
ns
0
7
ns
3
-
ns
0
-
ns
-
15
ns
-4-
Revision 3.0
September 2001
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