KSA1015 データシートの表示（PDF） - Fairchild Semiconductor

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KSA1015

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSA1015

LOW FREQUENCY AMPLIFIER

• Collector-Base Voltage : VCBO= -50V

• Complement to KSC1815

1

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

PC

TJ

TST9

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

-50

-50

-5

-150

-50

400

125

-65 ~ 150

Units

V

V

V

mA

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE (sat)

VBE (sat)

fT

Cob

NF

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

IC= -100µA, IE=0

IC= -10mA, IB=0

IE= -10µA, IC=0

VCB= -50V, IE=0

VEB= -5V, IC=0

VCE= -6V, IC= -2mA

VCE= -6V, IC= -150mA

IC= -100mA, IB= -10mA

IC= -100mA, IB= -10mA

VCE= -10V, IC=-1mA

VCB= -10V, IE=0, f=1MHz

VCE= -6V, IC= -0.1mA

f=100Hz, RG=10kΩ

Min.

-50

-50

-5

70

25

80

Typ.

-0.1

4

0.5

Max.

-0.1

-0.1

400

Units

V

V

V

µA

µA

-0.3

V

-1.1

V

MHz

7

pF

6

dB

hFE Classification

Classification

hFE1

O

70 ~ 140

Y

120 ~ 240

GR

200 ~ 400

©2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002

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