L6206Q データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

L6206Q

DMOS dual full bridge driver

STMicroelectronics 

Paralleled operation

L6206Q

Figure 15. Parallel connection for higher current

96

9'& &

32:(5

*5 281'



6,*1$/

*5 281'

/2$'

96$ 

&

96 %



'

& %22 7

53

9&3

'

&3

9%22 7

6(16( $

6(16( %

287 $

287 $

287 %

287 %

















*1' 

2&' %





(1 %



2&' $

(1 $

5(1



(1

&(1

,1$



,1

 ,1$

,1%



 ,1%

,1

 352*&/ $

5&/$

 352*&/ %

5&/%

$0Y

To operate the device in parallel and maintain a lower overcurrent threshold, half bridge 1

and the half bridge 2 of bridge A can be connected in parallel and the same is done for

bridge B, as shown in Figure 16. In this configuration, the peak current for each half bridge

is still limited by the bond wires for the supply and sense pins so the dissipation in the device

is reduced, but the peak current rating is not increased.

When connected in this configuration the overcurrent detection circuit, senses the sum of

the current in upper devices connected in parallel. With the enable pins connected in

parallel, an overcurrent turns off both bridges.

Since the circuit senses the total current in the upper devices, the overcurrent threshold is

equal to the threshold set by the resistor RCLA or RCLB in Figure 16. RCLA sets the threshold

when outputs OUT1A and OUT2A are high and resistor RCLB sets the threshold when

outputs OUT1B and OUT2B are high.

It is recommended to use RCLA = RCLB.

In this configuration, the resulting bridge has the following characteristics.

 Equivalent device: full bridge

 RDS(ON) 0.15  typ. value at Tj = 25 °C

 2.5 A max. RMS load current

 5.6 A max. OCD threshold

18/27

DocID022028 Rev 3

Share Link: