FQD1P50 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FQD1P50 Datasheet PDF : 9 Pages
| |||
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-500 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = -250 µA, Referenced to 25°C --
-
IDSS
Zero Gate Voltage Drain Current
VDS = -500 V, VGS = 0 V
VDS = -400 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
V
VGS = -10 V, ID = -0.6 A
--
8.0 10.5
Ω
VDS = -50 V, ID = -0.6 A (Note 4) --
1.12
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 270 350
pF
--
40
50
pF
--
6.0
8.0
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -250 V, ID = -1.5 A,
RG = 25 Ω
--
9.0
30
ns
--
25
60
ns
--
27
65
ns
(Note 4, 5)
--
30
70
ns
VDS = -400 V, ID = -1.5 A,
--
11
14
nC
VGS = -10 V
--
2.0
--
nC
(Note 4, 5)
--
5.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-1.2
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-4.8
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.2 A
--
--
-5.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -1.5 A,
-- 200
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.7
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 138mH, IAS = -1.2A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. B3 January 2009
Share Link: 