M24C16-FTW20I/90 データシートの表示（PDF） - STMicroelectronics

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M24C16-FTW20I/90

16-Kbit serial I2C bus EEPROM

STMicroelectronics 

M24C16-W M24C16-R M24C16-F

DC and AC parameters

Symbol

Table 14. DC characteristics (M24C16-R, device grade 6)

Parameter

Test conditions(1) (in addition to

those in Table 6 and Table 9)

Min.

Max. Unit

ILI

Input leakage current

(SCL, SDA)

ILO Output leakage current

VIN = VSS or VCC, device in

Standby mode

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-

± 2 µA

-

± 2 µA

ICC Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

-

0.8 mA

ICC0 Supply current (Write)

ICC1 Standby supply current

VIL

Input low voltage

(SCL, SDA, WC)

Input high voltage

(SCL, SDA)

VIH Input high voltage

(WC)

Value overaged over tW,

VCC ≤2.5 V

Device not selected(3),

VIN = VSS or VCC, VCC = 1.8 V

2.5 V ≤ VCC

VCC < 2.5 V

VCC < 2.5 V

VCC < 2.5 V

-

1(2)

mA

-

1

µA

–0.45 0.3 VCC V

–0.45 0.25 VCC V

0.75 VCC 6.5

V

0.75 VCC VCC+ 0.6 V

VOL Output low voltage

IOL = 0.7 mA, VCC = 1.8 V

-

0.2

V

1.

If the

refer

application

to Table 13

uses the voltage range

instead of this table.

R

device

with

2.5

V

≤Vcc

≤5.5

V

and

-40

°C

<

TA

<

+85

°C,

please

2.

Characterized only (not tested in production) for devices identified by process letter T.

than 0.5 mA when writing data with an ambient temperature greater than 25 °C.

ICC0(max) is lower

3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

DocID023494 Rev 6

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