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M25P05-AVMB6TP データシートの表示(PDF) - Numonyx -> Micron

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M25P05-AVMB6TP Datasheet PDF : 52 Pages
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M25P05-A
Instructions
6.7
Read data bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data output (Q), each bit
being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 13.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single read data bytes at higher speed (FAST_READ) instruction.
There is no address roll-over; when the highest address (0FFFFh) is reached, the
instruction should be terminated.
The read data bytes at higher speed (FAST_READ) instruction is terminated by driving Chip
Select (S) High. Chip Select (S) can be driven High at any time during data output. Any read
data bytes at higher speed (FAST_READ) instruction, while an erase, program or write cycle
is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 13. Read data bytes at higher speed (FAST_READ) instruction sequence
and data-out sequence
S
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
C
Instruction
24-bit address
D
23 22 21
3210
High Impedance
Q
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Dummy byte
D
76543210
DATA OUT 1
DATA OUT 2
Q
76543210765432107
MSB
MSB
MSB
1. Address bits A23 to A16 must be set to 00h.
AI04006
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