M25PX32 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M25PX32

Serial Flash Memory

STMicroelectronics 

Operating features

M25PX32

4.5

Fast Bulk Erase mode

The Fast Bulk Erase mode is used to speed up Bulk Erase operations. The device enters

the Fast Bulk Erase mode during a Bulk Erase instruction whenever a voltage equal to VPPH

is applied to the W/VPP pin.

The use of the Fast Bulk Erase mode requires specific operating conditions in addition to the

normal ones (VCC must be within the normal operating range):

● the voltage applied to the W/VPP pin must be equal to VPPH (see Table 13)

● ambient temperature, TA must be 25 °C ±10 °C,

● the cumulated time during which W/VPP is at VPPH should be less than 80 hours.

4.6

Active Power, Standby Power and Deep Power-down modes

When Chip Select (S) is Low, the device is selected, and in the Active Power mode.

When Chip Select (S) is High, the device is deselected, but could remain in the Active Power

mode until all internal cycles have completed (Program, Erase, Write Status Register). The

device then goes in to the Standby Power mode. The device consumption drops to ICC1.

The Deep Power-down mode is entered when the specific instruction (the Deep Power-

down (DP) instruction) is executed. The device consumption drops further to ICC2. The

device remains in this mode until another specific instruction (the Release from Deep

Power-down (RDP) instruction) is executed.

While in the Deep Power-down mode, the device ignores all Write, Program and Erase

instructions (see Deep Power-down (DP)), this can be used as an extra software protection

mechanism, when the device is not in active use, to protect the device from inadvertent

Write, Program or Erase instructions.

4.7

Status Register

The Status Register contains a number of status and control bits that can be read or set (as

appropriate) by specific instructions. See Section 6.4: Read Status Register (RDSR) for a

detailed description of the Status Register bits.

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