MT28S4M16B1LLFG-10 データシートの表示（PDF） - Micron Technology
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MT28S4M16B1LLFG-10 Datasheet PDF : 58 Pages
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ADVANCE
64Mb: x16, x32
SYNCFLASH MEMORY
Figure 8
Random Read Accesses Within a Page
T0
T1
T2
T3
T4
CLK
COMMAND
READ
READ
READ
READ
NOP
ADDRESS
BANK,
COL n
BANK,
COL a
BANK,
COL x
BANK,
COL m
DQ
DOUT
n
CAS Latency = 1
DOUT
a
DOUT
x
DOUT
m
T0
T1
T2
T3
CLK
T4
T5
COMMAND
READ
READ
READ
READ
NOP
NOP
ADDRESS
BANK,
COL n
BANK,
COL a
BANK,
COL x
BANK,
COL m
DQ
DOUT
n
DOUT
a
DOUT
x
CAS Latency = 2
DOUT
m
T0
T1
T2
T3
T4
T5
T6
CLK
COMMAND
READ
READ
READ
READ
NOP
NOP
NOP
ADDRESS
BANK,
COL n
BANK,
COL a
BANK,
COL x
BANK,
COL m
DQ
DOUT
n
DOUT
a
CAS Latency = 3
NOTE: Each READ command may be to either bank. DQM is LOW.
DOUT
x
DOUT
m
DON’T CARE
64Mb: x16, x32 SyncFlash
MT28S4M16B1LL.p65 – Rev. 1, Pub. 5/02
21
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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