HN29V51211 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN29V51211

512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

Hitachi -> Renesas Electronics 

HN29V51211 Series

Power on and off, Serial Read Mode

Parameter

Symbol Min Typ Max Unit Test conditions

Notes

Write cycle time

Serial clock cycle time

CE setup time

CE hold time

Write pulse time

Write pulse high time

Address setup time

Address hold time

Data setup time

Data hold time

SC to output delay

OE setup time for SC

OE low to output low-Z

OE setup time before read

OE setup time before

command write

t CWC

t SCC

t CES

t CEH

t WP

t WPH

t AS

t AH

t DS

t DH

t SAC

t OES

t OEL

t OER

t OEWS

120 —

—

ns

50

—

—

ns

0

—

—

ns

0

—

—

ns

60

—

—

ns

CE = VIL, OE = VIH

40

—

—

ns

50

—

—

ns

10

—

—

ns

50

—

—

ns

10

—

—

ns

—

—

50

ns

CE = OE = VIL, WE = VIH

0

—

—

ns

0

—

40

ns

100 —

—

ns

0

—

—

ns

SC to output hold

OE high to output float

WE to SC delay time

RES to CE setup time

SC to OE hold time

SC pulse width

SC pulse low time

SC setup time for CE

CDE setup time for WE

CDE hold time for WE

VCC setup time for RES

RES to VCC hold time

CE setup time for RES

RDY/Busy undefined for VCC

off

t SH

t DF

t WSD

t RP

t SOH

t SP

t SPL

t SCS

t CDS

t CDH

t VRS

t VRH

t CESR

t DFP

15

—

—

ns

CE = OE = VIL, WE = VIH

—

—

40

ns

CE = VIL, WE = VIH

1

50

—

—

µs

2

0.3 —

—

ms

50

—

—

ns

20

—

—

ns

20

—

—

ns

0

—

—

ns

0

—

—

ns

20

—

—

ns

1

—

—

µs

CE = VIH

1

—

—

µs

CE = VIH

1

—

—

µs

0

—

—

ns

RES high to device ready

CE pulse high time

CE, WE setup time for RES

RES to CE, WE hold time

t BSY

t CPH

t CWRS

t CWRH

—

—

200 —

0

—

0

—

0.3 ms

—

ns

—

ns

—

ns

20

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