M28W160ECB データシートの表示（PDF） - Numonyx -> Micron

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M28W160ECB

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

Numonyx -> Micron 

M28W160ECT, M28W160ECB

Table 14. DC Characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max Unit

ILI Input Leakage Current

0V≤VIN ≤VDDQ

±1

µA

ILO Output Leakage Current

0V≤VOUT ≤VDDQ

±10

µA

IDD Supply Current (Read)

E = VSS, G = VIH, f = 5MHz

9

18

mA

IDD1

Supply Current (Stand-by or

Automatic Stand-by)

E = VDDQ ± 0.2V,

RP = VDDQ ± 0.2V

15

50

µA

IDD2

Supply Current

(Reset)

RP = VSS ± 0.2V

15

50

µA

IDD3 Supply Current (Program)

Program in progress

VPP = 12V ± 5%

Program in progress

VPP = VDD

5

10

mA

10

20

mA

IDD4 Supply Current (Erase)

Erase in progress

VPP = 12V ± 5%

Erase in progress

VPP = VDD

5

20

mA

10

20

mA

IDD5

Supply Current

(Program/Erase Suspend)

E = VDDQ ± 0.2V,

Erase suspended

15

50

µA

IPP

Program Current

(Read or Stand-by)

VPP > VDD

400

µA

IPP1

Program Current

(Read or Stand-by)

VPP ≤VDD

1

5

µA

IPP2 Program Current (Reset)

RP = VSS ± 0.2V

1

5

µA

IPP3 Program Current (Program)

Program in progress

VPP = 12V ± 5%

Program in progress

VPP = VDD

1

10

mA

1

5

µA

IPP4 Program Current (Erase)

Erase in progress

VPP = 12V ± 5%

Erase in progress

VPP = VDD

3

10

mA

1

5

µA

VIL Input Low Voltage

VDDQ ≥ 2.7V

–0.5

–0.5

0.4

V

0.8

V

VIH Input High Voltage

VDDQ ≥ 2.7V

VDDQ –0.4

0.7 VDDQ

VDDQ +0.4 V

VDDQ +0.4 V

VOL Output Low Voltage

IOL = 100µA, VDD = VDD min,

VDDQ = VDDQ min

0.1

V

VOH Output High Voltage

IOH = –100µA, VDD = VDD min,

VDDQ = VDDQ min

VDDQ –0.1

V

VPP1

Program Voltage (Program or

Erase operations)

1.65

3.6

V

VPPH

Program Voltage

(Program or Erase

operations)

11.4

12.6

V

VPPLK

Program Voltage

(Program and Erase lock-out)

1

V

VLKO

VDD Supply Voltage (Program

and Erase lock-out)

2

V

22/50

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