M28W800BB100N6T データシートの表示（PDF） - STMicroelectronics

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M28W800BB100N6T

8 Mbit (512Kb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

Figure 17. Double Word Program Flowchart and Pseudo Code

M28W800BT, M28W800BB

Start

Write 30h

Write Address 1

& Data 1 (3)

Write Address 2

& Data 2 (3)

Read Status

Register

double_word_program_command (addressToProgram1, dataToProgram1,

addressToProgram2, dataToProgram2)

{

writeToFlash (any_address, 0x30) ;

writeToFlash (addressToProgram1, dataToProgram1) ;

/*see note (3) */

writeToFlash (addressToProgram2, dataToProgram2) ;

/*see note (3) */

/*Memory enters read status state after

the Program command*/

do {

status_register=readFlash (any_address) ;

/* E or G must be toggled*/

NO

b7 = 1

YES

NO

b3 = 0

YES

NO

b4 = 0

YES

NO

b1 = 0

YES

End

} while (status_register.b7== 0) ;

VPP Invalid

Error (1, 2)

if (status_register.b3==1) /*VPP invalid error */

error_handler ( ) ;

Program

Error (1, 2)

if (status_register.b4==1) /*program error */

error_handler ( ) ;

Program to Protected

Block Error (1, 2)

if (status_register.b1==1) /*program to protect block error */

error_handler ( ) ;

}

AI03539b

Note: 1. Status check of b1 (Protected Block), b3 (VPP Invalid) and b4 (Program Error) can be made after each program operation or after

a sequence.

2. If an error is found, the Status Register must be cleared before further Program/Erase operations.

3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.

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