M29DW323DB90ZE6 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M29DW323DB90ZE6

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29DW323DT, M29DW323DB

Table 25. CFI Query System Interface Information

Address

x16

x8

Data

Description

VCC Logic Supply Minimum Program/Erase voltage

1Bh

36h

0027h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

VCC Logic Supply Maximum Program/Erase voltage

1Ch

38h

0036h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

VPP [Programming] Supply Minimum Program/Erase voltage

1Dh

3Ah

00B5h

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

VPP [Programming] Supply Maximum Program/Erase voltage

1Eh

3Ch

00C5h

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

1Fh

3Eh

0004h Typical timeout per single byte/word program = 2n µs

20h

40h

0000h Typical timeout for minimum size write buffer program = 2n µs

21h

42h

000Ah Typical timeout per individual block erase = 2n ms

22h

44h

0000h Typical timeout for full chip erase = 2n ms

23h

46h

0004h Maximum timeout for byte/word program = 2n times typical

24h

48h

0000h Maximum timeout for write buffer program = 2n times typical

25h

4Ah

0003h Maximum timeout per individual block erase = 2n times typical

26h

4Ch

0000h Maximum timeout for chip erase = 2n times typical

Value

2.7V

3.6V

11.5V

12.5V

16µs

NA

1s

NA

256 µs

NA

8s

NA

Table 26. Device Geometry Definition

Address

x16

x8

Data

Description

Value

27h

4Eh

0016h Device Size = 2n in number of bytes

4 MByte

28h

29h

50h

52h

0002h

0000h

Flash Device Interface Code description

x8, x16

Async.

2Ah

2Bh

54h

56h

0000h

0000h

Maximum number of bytes in multi-byte program or page = 2n

NA

2Ch

58h

0002h

Number of Erase Block Regions. It specifies the number of

regions containing contiguous Erase Blocks of the same size.

2

2Dh

5Ah

0007h Region 1 Information

2Eh

5Ch

0000h Number of identical size erase block = 0007h+1

8

2Fh

5Eh

0020h Region 1 Information

30h

60h

0000h Block size in Region 1 = 0020h * 256 byte

8Kbyte

31h

62h

003Eh Region 2 Information

32h

64h

0000h Number of identical size erase block = 003Eh+1

63

33h

66h

0000h Region 2 Information

34h

68h

0001h Block size in Region 2 = 0100h * 256 byte

64Kbyte

Note: The region information contained in addresses 2Dh to 34h (or 5Ah to 68h) is correct for the M29DW323DB. For the M29DW323DT the

regions must be reversed.

40/49

Share Link: