M29F100T, M29F100B
Figure 11. Data Polling Flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ= 7 YES
DATA
NO
NO DQ5
=1
YES
READ DQ7
DQ7
=
YES
DATA
NO
FAIL
PASS
AI01369
Figure 12. Data Toggle Flowchart
START
READ
DQ2, DQ5 & DQ6
DQ2=, DQ6 NO
TOGGLE
YES
NO DQ5
=1
YES
READ DQ2, DQ6
DQ2=, DQ6 NO
TOGGLE
YES
FAIL
PASS
AI01873
Table 18. Program, Erase Times and Program, Erase Endurance Cycles
(TA = 0 to 70°C; VCC = 5V ± 10% or 5V ± 5%)
Parameter
Chip Erase (Preprogrammed)
Chip Erase
Boot Block Erase
Parameter Block Erase
Main Block (32Kb) Erase
Main Block (64Kb) Erase
Chip Program (Byte)
Byte Program
Word Program
Program/Erase Cycles (per Block)
M29F100T / M29F100B
Min
Typ
Typical after
100k W/E Cycles
0.4
0.6
1.5
1.7
0.6
0.5
0.9
1.0
1.4
1.4
11
11
20
20
100,000
Unit
sec
sec
sec
sec
sec
sec
sec
µs
µs
cycles
22/30