M29F400 データシートの表示（PDF） - STMicroelectronics

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M29F400

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory

STMicroelectronics 

M29F400BT, M29F400BB

Program and erase times and endurance cycles

7

Program and erase times and endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per block are

shown in Table 8. Exact erase times may change depending on the memory array condition.

Table 8.

Program/ Erase times endurance cycles(1)

Parameter

Typical after

Min Typ(2) 100k W/E Cycles Max Unit

(2)

Chip Erase (All bits in the memory set to ‘0’)

1.5

Chip Erase

5

Block Erase (64 Kbytes)

0.6

Program (Byte or Word)

8

Chip Program (Byte by Byte)

4.5

Chip Program (Word by Word)

2.3

Program/Erase Cycles (per Block)

100,000

1. TA = 0 to 70°C, –40 to 85°C or –40 to 125°C

2. TA = 25°C, VCC = 5V.

1.5

s

5

20

s

0.6

4

s

8

150 µs

4.5

18

s

2.3

9

s

cycles

27/40

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