M29F800DB(2003) データシートの表示（PDF） - STMicroelectronics

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M29F800DB
(Rev.:2003)

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

STMicroelectronics 

M29F800DT, M29F800DB

REVISION HISTORY

Table 28. Document Revision History

Date

Version

Revision Details

13-Dec-2001

-01

First Issue

21-Jan-2002

-02

VIH(max) value corrected

Description of Ready/Busy signal clarified (and Figure 14 modified)

01-Mar-2002

-03

Clarified allowable commands during block erase

Clarified the mode the device returns to in the CFI Read Query command section

Revision numbering modified: a minor revision will be indicated by incrementing the digit

after the dot, and a major revision, by incrementing the digit before the dot (revision

version 03 equals 3.0).

17-Feb-2003

4.0

Erase Suspend Latency Time (typical) and Data Retention parameters added to Table 6,

Program, Erase Times and Program, Erase Endurance Cycles, and notes added to the

table. Logic Diagram and Data Toggle Flowchart corrected.

Lead-free package options E and F added to Table 18, Ordering Information Scheme.

Document promoted to full datasheet.

08-Jul-2003

TSOP48 package information updated (see Figure 16 and Table 17). Cross-references

4.1

updated on page 29, COMMON FLASH INTERFACE (CFI) Appendix. Temperature range

3 added.

38/39

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