M2S56D20TP データシートの表示（PDF） - Mitsumi

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M2S56D20TP

256M Double Data Rate Synchronous DRAM

Mitsumi 

DDR SDRAM (Rev.0.0)

MITSUBISHI LSIs

Sep.'99 Preliminary

M2S56D20/ 30 TP

256M Double Data Rate Synchronous DRAM

AVERAGE SUPPLY CURRENT from Vdd

(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted)

Symbol

Parameter/Test Conditions

Limits(max)

-75 -10

Unit Notes

OPERATING CURRENT: One Bank; Active-Precharge;

IDD0

t RC = t RC MIN; t CK = t CK MIN; DQ, DM and DQS inputs

changing twice per clock cycle; address and control inputs changing

90

once per clock cycle

80 mA

IDD1

OPERATING CURRENT: One Bank; Active-Read-Precharge;

Burst = 2; t RC = t RC MIN; CL = 2.5; t CK = t CK MIN; IOUT= 0

mA;Address and control inputs changing once per clock cycle

110 100 mA

IDD2P

PRECHARGE POWER-DOWN STANDBY CURRENT: All banks

idle; power-down mode; CKE ≤ VIL (MAX); t CK = t CK MIN

12

12 mA

IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle;

IDD2N CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs 30

changing once per clock cycle

IDD3P

ACTIVE POWER-DOWN STANDBY CURRENT: One bank active;

power-down mode; CKE ≤ VIL (MAX); t CK = t CK MIN

15

ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN);

IDD3N

One bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN;

DQ,DM and DQS inputs changing twice per clock cycle; address

50

and other control inputs changing once per clock cycle

OPERATING CURRENT: Burst = 2; Reads; Continuous burst;One

IDD4R bank active; Address and control inputs changing once per clock

140

cycle; CL = 2.5; t CK = t CK MIN; IOUT = 0 mA

OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One

IDD4W

bank active; Address and control inputs changing once per clock

cycle; CL = 2.5; t CK = t CK MIN; DQ, DM and DQS inputs changing

120

twice per clock cycle

IDD5 AUTO REFRESH CURRENT: t RC = t RFC (MIN)

160

IDD6 SELF REFRESH CURRENT: CKE≤0.2V

2

30 mA

15 mA

50 mA

120 mA

100 mA

150 mA

2 mA 9

AC OPERATING CONDITIONS AND CHARACTERISTICS

(Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)

Symbol

Parameter/Test Conditions

VIH(AC) High-Level Input Voltage (AC)

VIL(AC) Low-Level Input Voltage (AC)

Limits

Min.

Unit Notes

Max.

Vref + 0.35

V

Vref - 0.35 V

VID(AC) Input Differential Voltage, CLK and /CLK

0.7

VDDQ + 0.6 V

7

VIX(AC) Input Crossing Point Voltage, CLK and /CLK

IOZ

Off-state Output Current /Q floating Vo=0~VDDQ

II

Input Current / VIN=0 ~ VddQ

0.5*VDDQ-0.2 0.5*VDDQ+0.2 V

8

-5

5

µA

-5

5

µA

MITSUBISHI

ELECTRIC

17

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