M34513E4SP/FP データシートの表示（PDF） - Renesas Electronics
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M34513E4SP/FP Datasheet PDF : 97 Pages
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MITSUBISHI MICROCOMPUTERS
4513/4514 Group
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER
A-D CONVERTER RECOMMENDED OPERATING CONDITIONS
(Comparator mode included, Ta = –20 °C to 85 °C, unless otherwise noted)
Symbol
Parameter
VDD
Supply voltage
VIA
Analog input voltage
f(XIN) Oscillation frequency
Conditions
Middle-speed mode, VDD ≥ 2.7 V
High-speed mode, VDD ≥ 2.7 V
Limits
Unit
Min.
Typ.
Max.
2.7
5.5
V
0
VDD
V
0.8
MHz
0.4
MHz
A-D CONVERTER CHARACTERISTICS
(Ta = –20 °C to 85 °C, unless otherwise noted)
Symbol
Parameter
Test conditions
–
–
–
V0T
VFST
IADD
TCONV
–
–
–
Resolution
Linearity error
Differential non-linearity error
Zero transition voltage
Full-scale transition voltage
A–D operating current
A-D conversion time
Comparator resolution
Comparator error (Note)
Comparator comparison time
Ta = 25 °C, VDD = 2.7 V to 5.5 V
Ta = –25 °C to 85 ° C, VDD = 3.0 V to 5.5 V
Ta = 25 °C, VDD = 2.7 V to 5.5 V
Ta = –25 °C to 85 ° C, VDD = 3.0 V to 5.5 V
VDD = 5.12 V
VDD = 3.072 V
VDD = 5.12 V
VDD = 3.072 V
VDD = 5.0 V
f(XIN) = 0.4 MHz to 4.0 MHz
VDD = 3.0 V
f(XIN) = 0.4 MHz to 2.0 MHz
f(XIN) = 4.0 MHz, Middle-speed mode
f(XIN) = 4.0 MHz, High-speed mode
Comparator mode
VDD = 5.12 V
VDD = 3.072 V
f(XIN) = 4.0 MHz, Middle-speed mode
f(XIN) = 4.0 MHz, High-speed mode
Min.
0
0
5105
3060
Limits
Typ.
5
3
5115
3069
0.7
0.2
Unit
Max.
10
bits
±2
LSB
±0.9 LSB
20
mV
15
5125
mV
3075
2.0
mA
0.4
93.0
µs
46.5
8
bits
±20
mV
±15
12
µs
6
Note: As for the error from the ideal value in the comparator mode, when the contents of the comparator register is n, the logic value of the comparison volt-
age Vref which is generated by the built-in DA converter can be obtained by the following formula.
Logic value of comparison voltage Vref
VDD
Vref =
✕n
256
n = Value of register AD (n = 0 to 255)
VOLTAGE DROP DETECTION CIRCUIT CHARACTERISTICS
(Ta = –20 °C to 85 °C, unless otherwise noted)
Symbol
Parameter
Test conditions
VRST
IRST
Detection voltage
Operation current of voltage
drop detection circuit
Ta = 25 °C
VDD = 5.0 V
Limits
Unit
Min.
Typ.
Max.
2.7
4.1
V
3.3
3.5
3.7
50
100
µA
92
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