M36DR432CZA データシートの表示（PDF） - STMicroelectronics

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M36DR432CZA

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432C, M36DR432D

POWER CONSUMPTION

Power Down

The memory provides Reset/Power Down control

input RPF. The Power Down function can be acti-

vated only if the relevant Configuration Register bit

is set to '1'. In this case, when the RPF signal is

pulled at VSS the supply current drops to typically

ICC2 (see Table 24), the memory is deselected and

the outputs are in high impedance.If RPF is pulled

to VSS during a Program or Erase operation, this

operation is aborted in tPLQ7V and the memory

content is no longer valid (see Reset/Power Down

input description).

Power Up

The memory Command Interface is reset on Pow-

er-Up to Read Array. Either EF or WF must be tied

to VIH during Power-Up to allow maximum security

and the possibility to write a command on the first

rising edge of WF.

During Power-Up RPF must remain low for at least

50µs after VDD is applied, to allow correct initializa-

tion of the CPU.

Supply Rails

Normal precautions must be taken for supply volt-

age decoupling; each device in a system should

have the VDDF rails decoupled with a 0.1µF capac-

itor close to the VDDF and VSS pins. The PCB trace

widths should be sufficient to carry the required

VDDF program and erase currents.

18/46

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