M36W432B70ZA6T データシートの表示（PDF） - STMicroelectronics

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M36W432B70ZA6T

32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W432T, M36W432B

Table 14. DC Characteristics

Symbol

Parameter

Device

Test Condition

Min Typ Max Unit

ILI Input Leakage Current

Flash &

SRAM

0V ≤ VIN ≤ VDDQF

±2

µA

ILO Output Leakage Current

Flash &

SRAM

0V ≤ VOUT ≤ VDDQF,

SRAM Outputs Hi-Z

±10

µA

IDDS VDD Standby Current

Flash

SRAM

EF = VDDQF ± 0.2V

VDDQF = VDDF max

E1S = E2S ≥ VDDS – 0.2V

or E2S ≤ 0.2V

15

50

µA

20

50

µA

IDDD Supply Current (Reset)

IDD Supply Current

Flash

SRAM

RPF = VSSF ± 0.2V

VIN ≤ VDDS – 0.2V

or VIN ≤ 0.2V

IIO = 0 mA, cycle time = 1µs

VIN ≤ VDDS – 0.2V

or VIN ≤ 0.2V

IIO = 0 mA, min cycle time

15

50

µA

1

2

mA

7

12

mA

IDDR Supply Current (Read)

Flash EF = VIL, GF = VIH, f = 5 MHz

10

20

mA

IDDW Supply Current (Program)

Flash

Program in progress

10

20

mA

IDDE Supply Current (Erase)

Flash

Erase in progress

5

20

mA

IDDES

Supply Current

(Erase Suspend)

Flash Erase Suspend in progress

50

µA

IDDWS

Supply Current

(Program Suspend)

Flash Program Suspend in progress

50

µA

IPPS

Program Current

(Standby)

Flash

VPPF ≤ VDDQF

VPPF > VDDF

0.2

5

µA

100

400

µA

IPPR

Program Current

(Read)

Flash

VPPF ≤ VDDQF

VPPF = VDDF

0.2

5

µA

100

400

µA

IPPW

Program Current

(Program)

Flash

VPPF = 12V ± 0.6V

Program in progress

5

10

mA

IPPE

Program Current

(Erase)

Flash

VPPF = 12V ± 0.6V

Program in progress

5

10

mA

VIL Input Low Voltage

Flash &

SRAM

VDDQF = VDDS ≥ 2.7V

– 0.3

0.8

V

VIH Input High Voltage

Flash &

SRAM

VDDQF = VDDS ≥ 2.7V

2.2

VDDQF

+0.3

V

VOL Output Low Voltage

VOH Output High Voltage

Flash &

SRAM

Flash &

SRAM

VDDQF = VDDS = VDD min

IOL = 100µA

VDDQF = VDDS = VDD min

IOH = –100µA

VDDQ

–0.1

0.1

V

V

VPPL

Program Voltage (Program or

Erase operations)

Flash

2.7

3.3

V

23/57

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