M36W0R6040T0 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M36W0R6040T0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

STMicroelectronics 

M36W0R6040T0, M36W0R6040B0

Table 7. Flash Memory DC Characteristics - Voltages

Symbol

Parameter

Test Condition

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

IOL = 100µA

VOH Output High Voltage

IOH = –100µA

VPP1 VPPF Program Voltage-Logic

Program, Erase

VPPH VPPF Program Voltage Factory

Program, Erase

VPPLK Program or Erase Lockout

VLKO VDDF Lock Voltage

VRPH

RPF pin Extended High

Voltage

Min

Typ

Max

Unit

–0.5

0.4

V

VDDQ –0.4

VDDQ + 0.4 V

0.1

V

VDDQ –0.1

V

1.1

1.8

3.3

V

11.4

12

12.6

V

0.4

V

1

V

3.3

V

Table 8. PSRAM DC Characteristics

Symbol

Parameter

Test Condition

Min

Max

Unit

ICC1

ICC2

VDDP Active Current

VDDP = 1.95V,

VIN = VIH or VIL,

E1P = VIL and E2P = VIH,

IOUT = 0mA

tAVAV Read /

tAVAV Write =

minimum

tAVAV Read /

tAVAV Write =

maximum

20

mA

3

mA

ILI Input Leakage Current

0V ≤ VIN ≤ VDDP

–1

1

µA

ILO Output Leakage Current

0V ≤ VOUT ≤ VDDP

–1

1

µA

IPD Deep Power Down Current

VDDP = 1.95V,

E1P ≥ VDDP –0.2V or E1P ≤ VIL,

VIN ≥ VDDP –0.2V or VIN ≤ 0.2V

10

µA

ISB

Standby Supply Current

CMOS

VDDP = 1.95V,

E1P = E2P ≥ VDDP –0.3V,

IOUT = 0mA

110

µA

VIH (1) Input High Voltage

0.8VDDP VDDP + 0.2 V

VIL (2) Input Low Voltage

–0.3

0.4

V

VOH Output High Voltage

IOH = –0.5mA

VDDP –

0.2

V

VOL Output Low Voltage

IOL = 0.1mA

0.2

V

Note: 1. The maximum DC voltage on input and I/O pins is VDDP+0.2V. During voltage transitions, inputs may overshoot VDDP by 1.0V for

periods of up to 5ns.

2. The minimum DC voltage on input or I/O pins is –0.3V. During voltage transitions, inputs may undershoot VSS by 1.0V for periods

of up to 5ns.

14/18

Share Link: