M36W0R5020B0ZAQT データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M36W0R5020B0ZAQT

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

STMicroelectronics 

M36W0R5020T0, M36W0R5020B0

Figure 15. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled

VDDS

E1S or UBS, LBS

VDDS (min)

DATA RETENTION MODE

VDR

tCDR

tR

VDDS (min)

AI08197B

Figure 16. SRAM Low VDDS Data Retention AC Waveforms, E2S Controlled

VDDS

E2S

VDDS (min)

DATA RETENTION MODE

VDR

tCDR

tR

VDDS (min)

AI08198B

Table 11. SRAM Low VDDS Data Retention Characteristic

Symbol

Parameter

Test Condition

IDDDR

Supply Current

(Data Retention)

VDDS = 1.0V, E1S ≥ VDDS – 0.2V

or E2S ≤ 0.2V,

VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V

VDR

Supply Voltage

(Data Retention)

tCDR Chip Disable to Power Down

tR

Operation Recovery Time

Note: 1. Sampled only. Not 100% tested.

Min Max Unit

8 µA

1.0 1.95 V

0

ns

70

ns

22/26

Share Link: