M50LPW080K データシートの表示（PDF） - STMicroelectronics

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M50LPW080K

8 Mbit (1M x8, Uniform Block) 3V Supply Low Pin Count Flash Memory

STMicroelectronics 

M50LPW080

PROGRAM AND ERASE TIMES

The Program and Erase times are shown in Table

15..

Table 15. Program and Erase Times

Parameter

Interface Test Condition

Byte Program

Quadruple Byte Program

Chip Erase

A/A Mux

A/A Mux

VPP = 12V ± 5%

VPP = 12V ± 5%

Block Program

A/A Mux

VPP = 12V ± 5%

VPP = VCC

Block Erase

Program/Erase Suspend to Program pause (3)

VPP = 12V ± 5%

VPP = VCC

Program/Erase Suspend to Block Erase pause (3)

Note: 1. TA = 25°C, VCC = 3.3V

2. This time is obtained executing the Quadruple Byte Program Command.

3. Sampled only, not 100% tested.

Min Typ (1) Max

10 200

10 200

9

0.1 (2)

5

0.4

5

0.75

8

1

10

5

30

Unit

µs

µs

sec

sec

sec

sec

sec

µs

µs

23/44

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