M58BW016DT80T3T データシートの表示（PDF） - STMicroelectronics

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M58BW016DT80T3T

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

Figure 23. Block Erase Flowchart and Pseudo Code

Start

Write 20h

Write Block Address

& D0h

Read Status

Register

NO

Suspend

YES

NO

b7 = 1

Suspend

Loop

YES

NO

b3 = 0

YES

b4 and b5

=1

NO

YES

NO

b5 = 0

YES

NO

b1 = 0

YES

End

VPP Invalid

Error (1)

Command

Sequence Error

Erase

Error (1)

Erase to Protected

Block Error

Erase Command:

– write 20h

– write Block Address

(A11-A18) & D0h

(memory enters read status

state after the Erase command)

do:

– read status register

(E or G must be toggled)

if Erase command given execute

suspend erase loop

while b7 = 1

If b3 = 1, VPP invalid error:

– error handler

If b4, b5 = 1, Command Sequence error:

– error handler

If b5 = 1, Erase error:

– error handler

If b1 = 1, Erase to Protected Block Error:

– error handler

AI03851

Note: 1. If an error is found, the Status Register must be cleared before further P/E operations.

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