M58CR032C100ZB6T データシートの表示（PDF） - STMicroelectronics
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M58CR032C100ZB6T Datasheet PDF : 62 Pages
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M58CR032C, M58CR032D
Table 12. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Condition
Typical after
Min
Typ 100k W/E Max Unit
Cycles
Parameter Block (4 KWord) Erase(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
Not Preprogrammed
0.8
3
1.1
4
s
4
s
Preprogrammed
5.5
s
Bank A (8Mbit) Erase
Not Preprogrammed
9
s
Preprogrammed
16.5
s
Bank B (24Mbit) Erase
Not Preprogrammed
27
s
Parameter Block (4 KWord) Program(3)
40
ms
Main Block (32 KWord) Program(3)
300
ms
Word Program (3)
Program Suspend Latency
Erase Suspend Latency
Main Blocks
Program/Erase Cycles (per Block)
Parameter Blocks
10
5
5
100,000
100,000
10
100
µs
10
µs
20
µs
cycles
cycles
Parameter Block (4 KWord) Erase
Main Block (32 KWord) Erase
Bank A (8Mbit) Erase
Bank B (24Mbit) Erase
0.3
2.5
s
0.9
4
s
6.5
s
19.5
s
4Mbit Program
Quadruple Word
510
Word/ Double Word/ Quadruple Word Program(3)
8
ms
100
µs
Parameter Block (4 KWord)
Quadruple Word
8
ms
Program(3)
Word
32
ms
Quadruple Word
64
Main Block (32 KWord) Program(3)
Word
256
Main Blocks
Program/Erase Cycles (per Block)
Parameter Blocks
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
ms
ms
1000 cycles
2500 cycles
25/62
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