M58MR032-ZCT データシートの表示（PDF） - STMicroelectronics

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M58MR032-ZCT

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58MR032C, M58MR032D

Figure 15. Reset and Power-up AC Waveforms

L, W, E, G

RP

VDD, VDDQ

tPHWL

tPHEL

tPHGL

tVDHPH

Power-up

tPHWL

tPHEL

tPHGL

tPLPH

AI90033

Table 31. Reset and Power-up AC Characteristics

Symbol

Parameter

Test Condition

Min

tPLPH (1,2) RP Pulse Width

100

tPHEL

During Program and Erase

50

tPHLL

Reset High to Device Enabled

tPHWL

Other Conditions

30

tVDHPH (3) Supply Valid to Reset High

50

Note: 1. The device Reset is possible but not guaranteed if tPLPH < 100ns.

2. Sampled only, not 100% tested.

3. It is important to assert RP in order to allow proper CPU initialization during Power-up or System reset.

Unit

ns

µs

ns

µs

Table 32. Program, Erase Times and Program, Erase Endurance Cycles

(TA = –40 to 85°C; VDD = VDDQ = 1.7V to 2.0V, VPP = VDD unless otherwise specified)

Parameter

Min

Max (1)

Typ

Typical after

100k W/E Cycles

Unit

Parameter Block (4 K-Word) Erase (Preprogrammed)

2.5

0.5

1

sec

Main Block (32 K-Word) Erase (Preprogrammed)

10

1

3

sec

Bank Erase (Preprogrammed, Bank A)

4

sec

Bank Erase (Preprogrammed, Bank B)

15

sec

Chip Program (2)

40

sec

Chip Program (DPG, VPP = 12V) (2)

20

sec

Word Program (3)

200

10

10

µs

Double Word Program

200

10

10

µs

Tetra Word Program

200

10

10

µs

Program/Erase Cycles (per Block)

100,000

cycles

Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or

erase should perform significantly better.

2. Excludes the time needed to execute the sequence for program instruction.

3. Same timing value if VPP = 12V.

40/52

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