M58MR064D データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M58MR064D

64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58MR064C, M58MR064D

Table 14. Read Configuration Register (AS and Read CFI instructions) (1)

Configuration Register

Function

CR15

Read mode

0 = Synchronous Burst mode read

1 = Asynchronous Page mode read (default)

CR14

Bus Invert configuration (power save)

0 = disabled (default)

1 = enabled

CR13-CR11

X-Latency

010 = 2 clock latency

011 = 3 clock latency

100 = 4 clock latency

101 = 5 clock latency

111 = reserved

Other configurations reserved

CR10

Power-down configuration

0 = power-down disabled (default)

1 = power-down enabled

CR9

Reserved

CR8

Wait configuration

0 = WAIT is active during wait state

1 = WAIT is active one data cycle before wait state (default)

CR7

Burst order configuration

0 = Interleaved

1 = Linear (default)

CR6

Clock configuration

0 = Address latched and data output on the falling clock edge

1 = Address latched and data output on the rising clock edge (default)

CR5-CR4

Reserved

CR3

Burst Wrap

0 = burst wrap within burst length set by CR2-CR0

1 = Don’t wrap accesses within burst length set by CR2-CR0 (default)

CR2-CR0

Burst length

001 = 4 word burst length

010 = 8 word burst length

111 = Continuous burst mode (requires CR7 = 1)

Note: 1. The RCR can be read via the RSIG command (90h). Bank A Address + 05h contains the RCR data. See Table 9.

2. All the bits in the RCR are set to default on device power-up or reset.

Table 15. BINV Configuration Bits

CR15

CR14

BINV

IN

OUT

0

0

X

0

0

1

Active

Active

1

0

X

0

1

1

Active

0

19/52

Share Link: