M58MR064C, M58MR064D
Table 19. CFI Query System Interface Information
Offset
Data
Description
VDD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0017h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
VDD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0020h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
0017h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C0h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1Fh
0004h Typical timeout per single byte/word program = 2n µs
20h
0004h Typical timeout for tetra word program = 2n µs
21h
000Ah Typical timeout per individual block erase = 2n ms
22h
0000h Typical timeout for full chip erase = 2n ms
23h
0004h Maximum timeout for word program = 2n times typical
24h
0004h Maximum timeout for tetra word = 2n times typical
25h
0004h Maximum timeout per individual block erase = 2n times typical
26h
0000h Maximum timeout for chip erase = 2n times typical
Value
1.7V
2V
1.7V
12V
16µs
16µs
1s
NA
256µs
256µs
16s
NA
25/52