M58MR064D データシートの表示（PDF） - STMicroelectronics
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M58MR064D Datasheet PDF : 52 Pages
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M58MR064C, M58MR064D
Table 26. DC Characteristics
(TA = –40 to 85°C; VDD = VDDQ = 1.65V to 2.0V)
Symbol
Parameter
Test Condition
Min
ILI Input Leakage Current
0V ≤ VIN ≤ VDDQ
ILO Output Leakage Current
0V ≤ VOUT ≤ VDDQ
Supply Current
(Asynchronous Read Mode)
E = VIL, G = VIH, f = 6MHz
ICC1 Supply Current
(Synchronous Read Mode
Continuous Burst)
E = VIL, G = VIH, f = 40MHz
ICC2
Supply Current
(Power-down)
RP = VSS ± 0.2V
ICC3 Supply Current (Standby)
E = VDD ± 0.2V
ICC4 (1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
ICC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Asynchronous
Read in the other Bank
Program/Erase in progress
in one Bank, Synchronous
Read in the other Bank
IPP1
VPP Supply Current (Program
or Erase)
VPP = 12V ± 0.6V
IPP2
VPP Supply Current (Standby
or Read)
VPP ≤ VCC
VPP = 12V ± 0.6V
VIL Input Low Voltage
–0.5
VIH Input High Voltage
VDDQ –0.4
VOL Output Low Voltage
IOL = 100µA
VOH Output High Voltage CMOS
IOH = –100µA
VDDQ –0.1
VPP1 VPP Supply Voltage
Program, Erase
VDDQ –0.4
VPPH VPP Supply Voltage
Double/Tetra Word Program 11.4
VPPLK Program or Erase Lockout
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
Typ
Max
Unit
±1
µA
±5
µA
10
20
mA
20
30
mA
2
10
µA
15
50
µA
10
20
mA
20
40
mA
30
50
mA
5
10
mA
0.2
5
µA
100
400
µA
0.4
V
VDDQ + 0.4 V
0.1
V
V
VDDQ + 0.4 V
12.6
V
1
V
30/52
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