M59DR032EA データシートの表示（PDF） - STMicroelectronics

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M59DR032EA

32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

STMicroelectronics 

M59DR032EA, M59DR032EB

Table 21. Data Polling and Toggle Bits AC Characteristics

Symbol

Parameter

M59DR032E

Unit

Min

Max

Write Enable High to DQ7 Valid (Program, W Controlled)

8

tWHQ7V

Write Enable High to DQ7 Valid (Block Erase, W Controlled)

0.8

100

µs

4

s

Chip Enable High to DQ7 Valid (Program, E Controlled)

8

tEHQ7V

Chip Enable High to DQ7 Valid (Block Erase, E Controlled)

0.8

100

µs

4

s

tQ7VQV

Q7 Valid to Output Valid (Data Polling)

0

ns

tWHQV

Write Enable High to Output Valid (Program)

Write Enable High to Output Valid (Block Erase)

8

100

µs

0.8

4

s

tEHQV

Chip Enable High to Output Valid (Program)

Chip Enable High to Output Valid (Block Erase)

Note: All other timings are defined in Read AC Characteristics

8

100

µs

0.8

4

s

Figure 14. Data Polling Flowchart

Figure 15. Data Toggle Flowchart

START

READ DQ5 & DQ7

at VALID ADDRESS

DQ7

=

DATA

NO

YES

NO DQ5

=1

YES

READ DQ7

START

READ

DQ5 & DQ6

DQ= 6

NO

TOGGLES

YES

NO DQ5

=1

YES

READ DQ6

DQ= 7

DATA

NO

YES

FAIL

PASS

AI06197

DQ= 6

NO

TOGGLES

YES

FAIL

PASS

AI06198

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