MBM29DL800BA-70PFTN データシートの表示（PDF） - Fujitsu

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MBM29DL800BA-70PFTN

FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT

Fujitsu 

MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Min.

Limits

Typ.

Max.

Sector Erase Time

—

1

10

Word Programming Time

Byte Programming Time

—

16

360

—

8

300

Chip Programming Time

—

8.4

25

Program/Erase Cycle

100,000

—

—

Unit

Comments

sec

Excludes programming time

prior to erasure

µs Excludes system-level

µs overhead

sec

Excludes system-level

overhead

cycles

—

s TSOP(I) PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

s FBGA PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ.

Max.

Unit

6

7.5

pF

8.5

12

pF

8

10

pF

Typ.

Max.

Unit

6

7.5

pF

8.5

12

pF

8

10

pF

55

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