29LV650 データシートの表示（PDF） - Fujitsu

部品番号

コンポーネント説明

メーカー

29LV650

FLASH MEMORY CMOS 64M (4M x 16) BIT

Fujitsu 

MBM29LV650UE/651UE-90/12

s FUNCTIONAL DESCRIPTION

Read Mode

The MBM29LV650UE/651UE has two control functions which must be satisfied in order to obtain data at the

outputs. CE is the power control and should be used for a device selection. OE is the output control and should

be used to gate data to the output pins if a device is selected.

Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable

access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output

enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the

addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after

power-up, it is necessary to input hardware reset or to change CE pin from “H” or “L”.

Standby Mode

There are two ways to implement the standby mode on the MBM29LV650UE/651UE devices, one using both

the CE and RESET pins; the other via the RESET pin only.

When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ±0.3 V.

Under this condition the current consumed is less than 5 µA max. During Embedded Algorithm operation, VCC

active current (ICC2) is required even CE = “H”. The device can be read with standard access time (tCE) from either

of these standby modes.

When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ±0.3 V (CE

= “H” or “L”). Under this condition the current consumed is less than 5 µA max. Once the RESET pin is taken

high, the device requires tRH of wake up time before outputs are valid for read access.

In the standby mode the outputs are in the high impedance state, independent of the OE input.

Automatic Sleep Mode

There is a function called automatic sleep mode to restrain power consumption during read-out of

MBM29LV650UE/651UE data. This mode can be used effectively with an application requesting low power

consumption such as handy terminals.

To activate this mode, MBM29LV650UE/651UE automatically switch themselves to low power mode when

MBM29LV650UE/651UE addresses remain stable during access fine of 150 ns. It is not necessary to control

CE, WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level).

Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed,

the mode is canceled automatically and MBM29LV650UE/651UE read-out the data for changed addresses.

Output Disable

With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins

to be in a high impedance state.

Autoselect

The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer

and type. This mode is intended for use by programming equipment for the purpose of automatically matching

the devices to be programmed with its corresponding programming algorithm. The Autoselect command may

also be used to check the status of write-protected sectors (see Tables 4.1 and 4.2). This mode is functional

over the entire temperature range of the devices.

To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two

identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All

addresses are DON’T CARES except A0, A1, and A6. (See Table 2.)

The manufacturer and device codes may also be read via the command register, for instances when the

MBM29LV650UE/651UE is erased or programmed in a system without access to high voltage on the A9 pin.

The command sequence is illustrated in Table 3. (Refer to Autoselect Command section.)

17

Share Link: