DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBRS320TR データシートの表示(PDF) - International Rectifier

部品番号
コンポーネント説明
メーカー
MBRS320TR
IR
International Rectifier IR
MBRS320TR Datasheet PDF : 5 Pages
1 2 3 4 5
MBRS320TR
Bulletin PD-20645 rev. A 02/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
MBRS320TR
20
Absolute Maximum Ratings
Parameters
IF(AV) Max.Average Forward Current
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
EAS Non Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
Value Units Conditions
3.0
A 50%duty cycle@TL=136°C,rectangular waveform
820
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and
80
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
6
mJ TJ = 25 °C, IAS = 1.5A, L = 5mH
1.0
A
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (1)
IRM Max.ReverseLeakageCurrent (1)
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Typ.
0.41
0.45
0.29
0.35
0.04
8.0
23
360
3.0
-
Max.
0.45
0.53
0.36
0.46
0.5
20
35
-
-
10000
Units Conditions
V
V
V
V
mA
mA
mA
pF
nH
V/ µs
@ 3A
@ 6A
TJ = 25 °C
@ 3A
@ 6A
TJ = 125 °C
T J = 25 °C
TJ = 100 °C
VR = rated VR
TJ = 125 °C
VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
Measured lead to lead 5mm from package body
(Rated VR)
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
TJ Max.JunctionTemperatureRange (*)
Tstg Max.Storage Temperature Range
RthJL Max.Thermal Resistance Junction
to Lead
(**)
- 65 to 150 °C
- 65 to 150 °C
12 °C/W
DC operation
RthJA Max.ThermalResistanceJunction
to Ambient
46 °C/W
Wt ApproximateWeight
0.24(0.008) gr(oz)
Case Style
SMC
Similar DO-214AB
Device Marking
IR32
(*) dPtot
dTj
<
1
Rth( j-a)
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
www.irf.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]