MMBFJ309LT1G(2009) データシートの表示（PDF） - ON Semiconductor

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MMBFJ309LT1G
(Rev.:2009)

JFET - VHF/UHF Amplifier Transistor

ON Semiconductor 

MMBFJ309LT1G, MMBFJ310LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(IG = −1.0 mAdc, VDS = 0)

V(BR)GSS

− 25

−

−

Vdc

Gate Reverse Current (VGS = −15 Vdc)

Gate Reverse Current (VGS = −15 Vdc, TA = 125°C)

IGSS

−

−

− 1.0

nAdc

−

−

− 1.0

mAdc

Gate Source Cutoff Voltage

(VDS = 10 Vdc, ID = 1.0 nAdc)

MMBFJ309

VGS(off)

− 1.0

−

− 4.0

Vdc

MMBFJ310

− 2.0

−

− 6.5

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current

(VDS = 10 Vdc, VGS = 0)

MMBFJ309

MMBFJ310

IDSS

12

−

30

mAdc

24

−

60

Gate−Source Forward Voltage

(IG = 1.0 mAdc, VDS = 0)

VGS(f)

−

−

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

|Yfs|

8.0

−

18

mmhos

Output Admittance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

|yos|

−

−

250

mmhos

Input Capacitance

(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)

Ciss

−

−

5.0

pF

Reverse Transfer Capacitance

(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)

Crss

−

−

2.5

pF

Equivalent Short−Circuit Input Noise Voltage

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)

en

−

10

−

nVń ǸHz

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